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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848D3-H www.DataSheet4U.com Issued Date : 2005.05.04 Revised Date : Page No. : 1/4
BTD882D3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics • Complementary to BTB772D3 • Pb-free package
Symbol
BTD882D3
Outline
TO-126ML
B：Base C：Collector E：Emitter EC B
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature
Note : Pulse test, pulse width≤380µs, duty cycle≤2%.
BTD882D3 Datasheet
