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BTD882J3 - NPN Transistor

Key Features

  • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTB772J3.
  • Pb-free lead plating and halogen-free package Symbol BTD882J3 Outline TO-252(DPAK) B:Base C:Collector E:Emitter B CE Ordering Information Device BTD882J3-X-T3-G Package TO-252 (Pb-free lead plating package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green com.

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Datasheet Details

Part number BTD882J3
Manufacturer Cystech Electonics Corp
File Size 343.53 KB
Description NPN Transistor
Datasheet download datasheet BTD882J3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882J3 BVCEO IC Spec. No. : C848J3-H Issued Date : 2003.04.02 Revised Date :2017.11.10 Page No. : 1/7 50V 3A Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.