Datasheet4U Logo Datasheet4U.com

BTD882T3 - NPN Transistor

Key Features

  • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTB772T3.
  • Pb-free lead plating package Symbol BTD882T3 Outline TO-126 B:Base C:Collector E:Emitter ECB Ordering Information Device BTD882T3-X-BL-X Package TO-126 (Pb-free lead plating package) Shipping 200 pcs / bag, 3,000 pcs/box , 30,000 pcs/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green c.

📥 Download Datasheet

Datasheet Details

Part number BTD882T3
Manufacturer Cystech Electonics Corp
File Size 290.52 KB
Description NPN Transistor
Datasheet download datasheet BTD882T3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. BTD882T3Low Vcesat NPN Epitaxial Planar Transistor BVCEO IC Spec. No. : C848T3-H Issued Date : 2002.08.18 Revised Date : 2017.10.19 Page No. : 1/6 50V 3A Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.