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BTD882D3 - NPN Transistor

Key Features

  • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA.
  • Excellent current gain characteristics.
  • Complementary to BTB772D3.
  • Pb-free package Symbol BTD882D3 Outline TO-126ML B：Base C：Collector E：Emitter EC B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Stor.

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Datasheet Details

Part number BTD882D3
Manufacturer Cystech Electonics Corp
File Size 196.20 KB
Description NPN Transistor
Datasheet download datasheet BTD882D3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848D3-H www.DataSheet4U.com Issued Date : 2005.05.04 Revised Date : Page No. : 1/4 BTD882D3 Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics • Complementary to BTB772D3 • Pb-free package Symbol BTD882D3 Outline TO-126ML B：Base C：Collector E：Emitter EC B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : Pulse test, pulse width≤380µs, duty cycle≤2%.