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BTD882I3 - NPN Transistor

Key Features

  • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTB772I3.
  • RoHS compliant package Symbol BTD882I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note :.
  • 1. Single Pulse Pw≦350μs,Duty≦2%. Symbo.

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Datasheet Details

Part number BTD882I3
Manufacturer Cystech Electonics Corp
File Size 225.56 KB
Description NPN Transistor
Datasheet download datasheet BTD882I3 Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882I3 BVCEO IC RCESAT Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2010.11.05 Page No. : 1/6 30V 3A 125mΩ typ. Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772I3 • RoHS compliant package Symbol BTD882I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350μs,Duty≦2%.