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BTD882SA3 - NPN Transistor

Key Features

  • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTB772SA3.
  • Pb-free lead plating and halogen-free package Symbol BTD882SA3 Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note :.
  • 1. Single Pulse Pw≦350μs,D.

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Datasheet Details

Part number BTD882SA3
Manufacturer Cystech Electonics Corp
File Size 302.58 KB
Description NPN Transistor
Datasheet download datasheet BTD882SA3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C848A3-H Issued Date : 2003.05.31 Revised Date :2013.03.21 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTD882SA3 BVCEO IC RCESAT (Typ) 50V 3A 125mΩ Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772SA3 • Pb-free lead plating and halogen-free package Symbol BTD882SA3 Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350μs,Duty≦2%.