BTD882T3S Datasheet | Cystech Electonics Corp

Features - Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A - Excellent current gain characteristics - plementary to BTB772T3/S - Pb-free package is available Symbol BTD882T3 Outline TO-126 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : - 1. Single Pulse Pw≦350µs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg Limit 40 30 5 3 7 1 10 150 -55~+150 Unit V V V A A W °C °C - 1 BTD882T3/S CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - VBE(sat) - h FE1 - h FE2 f T Cob Min. 40 30 5 52 100 Typ. 0.25 90 45 Max. 1 1 0.5 2 500 Unit V V V µA µA V V MHz p F Spec. No. : C848T3-H .. Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1m A, IB=0 IE=50µA, IC=0 VCB=50V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20m A VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz - Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of h FE 2 Rank Range Q 100~200 P 160~320 E 250~500 Ordering Information Device BTB882T3 BTB882T3S Package TO-126 TO-126 (Pb-free) Shipping 500 pcs / bag 500 pcs / bag BTD882T3/S CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current gain vs Collector...