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BTD882T3S - NPN Transistor

Download the BTD882T3S datasheet PDF. This datasheet also covers the BTD882T3 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTB772T3/S.
  • Pb-free package is available Symbol BTD882T3 Outline TO-126 B：Base C：Collector E：Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note :.
  • 1. Single Pulse Pw≦350µs,Duty≦2%. S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BTD882T3_CystechElectonicsCorp.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BTD882T3S
Manufacturer Cystech Electonics Corp
File Size 290.52 KB
Description NPN Transistor
Datasheet download datasheet BTD882T3S Datasheet

📁 Similar Datasheet

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Other Datasheets by Cystech Electonics Corp

Part Number Description
BTD882T3 NPN Transistor
BTD882AM3 NPN Transistor
BTD882D3 NPN Transistor
BTD882I3 NPN Transistor
BTD882J3 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C848T3-H www.DataSheet4U.com Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 BTD882T3/S Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772T3/S • Pb-free package is available Symbol BTD882T3 Outline TO-126 B：Base C：Collector E：Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350µs,Duty≦2%.