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DMN2990UFB Datasheet 20v N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: DMN2990UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V ID Max TA = +25°C 0.78A 0.71A 0.

General Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

 Battery Charging  Power Management Functions  DC-DC Converters

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: X1-DFN1006-3.
  • Case Material: Molded Plastic, "Green" Molding Compound; UL Flammabi.

More Datasheets from Diodes Incorporated

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