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DMT10H009LCG Datasheet 100v N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: DMT10H009LCG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 12.9mΩ @ VGS = 4.

General Description

and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance.

This device is ideal for use in notebook battery power management and loadswitch.

 Backlighting  Power Management Functions  DC-DC Converters

Key Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • High Conversion Efficiency.
  • Low RDS(ON).
  • Minimizes On State Losses.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case: V-DFN3333-8 (Type B).
  • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensit.

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