DMT10H009LCG Datasheet | Diodes Incorporated

100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 12.9mΩ @ VGS = 4.5V ID TC = +25°C 47A 39A Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch. - Backlighting - Power Management Functions - DC-DC Converters Features and Benefits - 100% Unclamped Inductive Switch (UIS) Test in Production - High Conversion Efficiency - Low RDS(ON) - Minimizes On State Losses - Low Input Capacitance - Fast Switching Speed - Totally Lead-Free & Fully RoHS...