* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* 100% Unclamped Inductive Switching (UIS) Test in Production
* Ensures More Reliable and Robust End Application
* Totally Lead-Free & Fully RoH
DMT10H009LSS Datasheet (462.45 KB)
DMT10H009LSS
462.45 KB
100v n-channel mosfet.
DMT10H009LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9mΩ @ VGS = 10V 13.8mΩ @ VGS = 4.5V ID Max TA = +25°C 1.
📁 Related Datasheet
DMT10H009LCG 100V N-Channel MOSFET (DIODES)
DMT10H009LFG 100V N-CHANNEL MOSFET (DIODES)
DMT10H009LK3 100V N-Channel MOSFET (DIODES)
DMT10H009LPS 100V N-CHANNEL MOSFET (DIODES)
DMT10H009SCG 100V N-CHANNEL MOSFET (DIODES)
DMT10H009SK3 100V N-CHANNEL MOSFET (DIODES)
DMT10H009SPS 100V N-CHANNEL MOSFET (DIODES)
DMT10H009SSS 100V N-CHANNEL MOSFET (DIODES)
DMT10H003SPSW 100V N-CHANNEL MOSFET (DIODES)
DMT10H010LCT N-Channel MOSFET (INCHANGE)
