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DMT10H009LSS Datasheet 100v N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: DMT10H009LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9mΩ @ VGS = 10V 13.8mΩ @ VGS = 4.

General Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

 High Frequency Switching  Synchronous Rectification  DC-DC Converters

Key Features

  • High Conversion Efficiency.
  • Low RDS(ON).
  • Minimizes On-State Losses.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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