DMT10H009LSS Datasheet | Diodes Incorporated

100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9mΩ @ VGS = 10V 13.8mΩ @ VGS = 4.5V ID Max TA = +25°C 13A 10A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. - High Frequency Switching - Synchronous Rectification - DC-DC Converters Features and Benefits - High Conversion Efficiency - Low RDS(ON)- Minimizes On-State Losses - Low Input Capacitance - Fast Switching Speed - 100% Unclamped Inductive Switching (UIS) Test in Production - Ensures More Reliable and Robust End Application -...