* 100% Unclamped Inductive Switching
* Ensures More Reliable and Robust End Application
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 &
DMT10H025SSS Datasheet (471.07 KB)
DMT10H025SSS
471.07 KB
100v n-channel mosfet.
DMT10H025SSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 23mΩ @ VGS = 10V 30mΩ @ VGS = 6V ID Max TA = +25°C 7.4A.
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