Datasheet Summary
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) max
52mΩ @ VGS = 10V 75mΩ @ VGS = 4.5V
ID max TA = +25°C
5A 4.1A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features and Benefits
- 0.6mm Profile
- Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low On-Resistance
- 100% Unclamped Inductive Switching (UIS) Test in Production
- Ensures More Reliable and Robust End Application
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green”...