* 0.6mm Profile
* Ideal for Low Profile Applications
* PCB Footprint of 4mm2
* Low On-Resistance
* 100% Unclamped Inductive Switching (UIS) Test in Production
* Ensures More Reliable and Robust End Application
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 &
DMT10H052LFDF Datasheet (477.23 KB)
DMT10H052LFDF
477.23 KB
100v n-channel mosfet.
DMT10H052LFDF 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) max 52mΩ @ VGS = 10V 75mΩ @ VGS = 4.5V ID max TA = +25°C 5.
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