DMT10H4M5LPS Datasheet - DIODES

100V N-CHANNEL MOSFET

DMT10H4M5LPS Features

* BVDSS 100V RDS(ON) Max 4.3mΩ @ VGS = 10V ID Max TC = +25°C (Note 9) 100A

* 100% Unclamped Inductive Switching (UIS) Test in Production

* Ensures More Reliable and Robust End Application

* High Conversion Efficiency

* Low RDS(ON)

* Minimizes On-State Losses

* Low I

DMT10H4M5LPS General Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. Applications * Motor Control * DC-DC Converters * Power Management PowerD.

DMT10H4M5LPS Datasheet (474.75 KB)