DMT10H4M5LPS Datasheet | Diodes Incorporated

ADVANCED INFORMATION Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS 100V RDS(ON) Max 4.3mΩ @ VGS = 10V ID Max TC = +25°C (Note 9) 100A - 100% Unclamped Inductive Switching (UIS) Test in Production - Ensures More Reliable and Robust End Application - High Conversion Efficiency - Low RDS(ON) - Minimizes On-State Losses - Low Input Capacitance - Fast Switching Speed - Lead-Free Finish; RoHS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in...