DMT3009UDT mosfet equivalent, dual n-channel enhancement mode mosfet.
* Ultra Low Gate Threshold Voltage
* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & F.
Features and Benefits
* Ultra Low Gate Threshold Voltage
* Low On-Resistance
* Low Input Capacitance
*.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features and Benefits
* Ultra Low Gate Threshold.
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