Datasheet Summary
AADDVVAANNACCDEEVDDA IINNNCFFEOOIRRNMMFAAOTTRIIMOOANNTION
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
BVDSS
RDS(ON) Max
11m @ VGS = 10V
30V 13m @ VGS = 4.5V
ID Max TC = +25°C
50A
45A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features and Benefits
- Low RDS(ON)
- Ensures On State Losses Are Minimized
- Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
- Occupies Just 33% of The Board Area Occupied by SO-8
Enabling Smaller End Product
- Wettable...