DS1610 Datasheet | Dallas Semiconducotr

.. DS1610 Partitioned NV Controller .dalsemi. Features Converts CMOS RAMs into nonvolatile memories SOIC version is pin-patible with the Dallas Semiconductor DS1210 NV Controller Unconditionally write protects all of memory when VCC is out of tolerance Write protects selected blocks of memory regardless of VCC status when programmed Automatically switches to battery backup supply when power-fail occurs Provides for multiple batteries Consumes less than 100 n A of battery current Test battery on power-up by inhibiting the second memory cycle Optional 5% or 10% power-fail detection 16-pin DIP or 16-pin SOIC surface-mount package Low forward voltage drop on the VCC switch with currents of up to 150 m A Optional industrial temperature range of -40°C to +85°C PIN ASSIGNMENT AW VCCO AX VBAT1 AY TOL DIS GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 PFO VCCI AZ VBAT2 WEO CEO WEI CEI 16-Pin DIP and 16-Pin SOIC PIN DESCRIPTION VCCI VBAT1 VBAT2 VCCO GND CEI CEO WEI WEO TOL AW - AZ DIS PFO - Input +5 Volt Supply - + Battery 1 Input - + Battery 2 Input - RAM Power (VCC) Supply - Ground - Chip Enable Input - Chip Enable Output - Write Enable Input - Write Enable Output - Power Supply Tolerance Select - Address Inputs - Memory Partition Disable - Power-Fail Output DESCRIPTION The DS1610 is a low-power CMOS circuit which solves the application problems of converting CMOS RAMS into nonvolatile memories. In addition the device has the ability to unconditionally write protect blocks of memory so that inadvertent write cycles do not corrupt program and special data space. The power supply ining voltage at the VCCI input pin is constantly monitored for an out-of-tolerance condition. When such a condition is detected, both the chip enable and write enable outputs are inhibited to protect stored data. The battery inputs are used to supply VCCO with power when VCCI is less than the battery input voltages. Special circuitry uses a low leakage CMOS process...