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2N2955 - PNP EPITAXIAL PLANAR TRANSISTOR

General Description

Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

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Datasheet Details

Part number 2N2955
Manufacturer Dc Components
File Size 285.26 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
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Full PDF Text Transcription for 2N2955 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2N2955. For precise diagrams, tables, and layout, please refer to the original PDF.

DC COMPONENTS CO., LTD. R 2N2955 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for power switching circuits, se...

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LANAR TRANSISTOR Description Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 1.573 Max (39.96) .875(22.23) .759(19.28) .450(11.43) .250(6.35) .480(12.19) .440(11.18) Pinning 1 = Base 2 = Emitter Case = Collector .135 Max (3.43) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VCEV VEBO IC IB PD TJ TSTG Rating -100 -60 -70 -7 -15 -7 Unit V V V V A A W o o .225(5.72)