BSS123W Datasheet | Diodes Incorporated

N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 170m A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Features and Benefits - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - High Drain-Source Voltage Rating - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://.diodes./quality/product-definitions/ - An automotive-pliant part is available under separate datasheet (BSS123WQ) - Small servo motor controls - Power MOSFET gate drivers - Switching applications SOT323 Mechanical Data - Package: SOT323 - Package Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections: See Diagram - Terminals: Matte Tin Finish Annealed over Alloy 42...