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Diodes Semiconductor Electronic Components Datasheet

BSS123W Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

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Product Summary
V(BR)DSS
100V
RDS(ON)
6.0@ VGS = 10V
ID
TA = +25°C
170mA
Description
This MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Switching Applications
BSS123W
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT323
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
Weight: 0.006 grams (Approximate)
SOT323
D
D
G
Top View
S
Equivalent Circuit
GS
Top View
Ordering Information (Note 4)
Notes:
Part Number
BSS123W-7-F
Compliance
Standard
Case
SOT323
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K23
K23 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year 2002 2003 2004 2005 2006 … 2012 2013
Code
N
P
R
S
T
Z
A
Month
Jan
Feb
Mar Apr May Jun
Jul
Code
1
2
3
4
5
6
7
BSS123W
Document number: DS30368 Rev. 12 - 2
1 of 5
www.diodes.com
2014
B
2015
C
2016
D
2017
E
2018
F
Aug Sep Oct Nov
8 9 ON
2019
G
Dec
D
August 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

BSS123W Datasheet

N-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS 20K
Gate-Source Voltage
Drain Current (Note 5)
Continuous
Continuous
Pulsed
Symbol
VDSS
VDGR
VGSS
ID
IDM
Value
100
100
±20
170
680
BSS123W
Units
V
V
V
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
200
625
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Drain-Source Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS(Note 7)
Turn-On Rise Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS 100
V VGS = 0V, ID = 250µA
IDSS
1.0 µA VDS = 100V, VGS = 0V
10 nA VDS = 20V, VGS = 0V
IGSSF
50
nA VGS = 20V, VDS = 0V
VGS(th)
RDS(ON)
gFS
VSD
0.8
80
1.4
370
0.84
2.0
6.0
10
1.3
V VDS = VGS, ID = 1mA
VGS = 10V, ID = 0.17A
VGS = 4.5V, ID = 0.17A
mS VDS = 10V, ID = 0.17A, f = 1.0KHz
V VGS = 0V, IS = 0.34A
Ciss 29 60 pF
Coss
10
15
pF VDS = 25V, VGS = 0V, f = 1.0MHz
Crss
2
6 pF
tr   8 ns
tf   16 ns VDD = 30V, ID = 0.28A,
tD(ON)
8
ns RGEN = 6.0, VGS = 10V
tD(OFF)
13
ns
Notes:
5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
BSS123W
Document number: DS30368 Rev. 12 - 2
2 of 5
www.diodes.com
August 2014
© Diodes Incorporated


Part Number BSS123W
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 5 Pages
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