DMN1032UCB4 mosfet equivalent, n-channel mosfet.
* LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 18mΩ to Minimize On-State Losses Qg = 3.2nC for Ultra-Fast Switching
* VGS(th) = 0.8V Typ. for a Lo.
* DC-DC converters
* Battery management
* Load switches
Features
* LD-MOS Technology with the Lowest Fi.
This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal imped.
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