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DMN1045UFR4 Datasheet N-Channel MOSFET

Manufacturer: Diodes Incorporated

General Description

and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

 Power Management Functions  Backlighting  Load Switch X2-DFN1010-3

Overview

NEW PRODUCT DMN1045UFR4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(ON) 45mΩ @ VGS = 4.5V 64mΩ @ VGS = 2.5V 85mΩ @ VGS = 1.8V 100mΩ @ VGS = 1.5V ID TA = +25°C 3.

Key Features

  • Low On-Resistance.
  • Low Input/Output Leakage.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case: X2-DFN1010-3.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminal Connections: See Diagram.
  • Terminals: Finish NiPdAu Anneal.