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DMN1045UFR4 N-Channel MOSFET

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Description

NEW PRODUCT DMN1045UFR4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(ON) 45mΩ @ VGS = 4.5V 64mΩ @ VGS = 2.5V 85mΩ @ VGS = 1..
and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching perfor.

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Features

* Low On-Resistance
* Low Input/Output Leakage
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data
* Case: X2-DFN1010-3
* Case Material: Molded Plasti

Applications

* This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Power Management Functions
* Backlighting

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