DMN10H170SVT Datasheet N-Channel MOSFET

Manufacturer: Diodes Incorporated

DMN10H170SVT n-channel mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMN10H170SVT
Manufacturer	Diodes Incorporated
File Size	468.28 KB
Description	N-Channel MOSFET
Download	DMN10H170SVT Download (PDF)

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Applications  Power Management Functions  Battery Operated Systems and Solid-State Relays  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Overview

ADVANCED INNEFWORPRMOADTIUOCNT DMN10H170SVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V ID max TA = +25°C 2.6A 2.

Key Features

Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
Case: TSOT26.
Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
Moisture Sensitivity: Level 1 per J-STD-020.
Terminal Connections: See Diagram.
Terminals: Finish  Matte Tin Annealed over Copper Leadf.

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