DMN10H220LFDF
DMN10H220LFDF is 100V N-CHANNEL MOSFET manufactured by Diodes Incorporated.
Product Summary
BVDSS 100V
RDS(ON) Max
225mΩ @ VGS = 10V 290mΩ @ VGS = 4.5V
ID Max TA = +25°C
2.2A 1.9A
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
- 100% Unclamped Inductive Switch (UIS) Test in Production
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
- Load Switch
U-DFN2020-6 (Type F)
Mechanical Data
- Case: U-DFN2020-6
- Case Material: Molded Plastic, “Green” Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish
- Ni Pd Au over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4
- Weight: 0.0065 grams (Approximate)
Top...
