DMN2016LHAB mosfet equivalent, dual n-channel mosfet.
* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully R.
Applications
* Case: U-DFN2030-6
* Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Cl.
Mechanical Data
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
* Case: .
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