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DMN2011UFDE - N-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions U-D

Key Features

  • 0.6mm Profile.
  • Ideal for Low Profile.

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ADVAADNVCAENDC IENIFNOFROMRAMTAITOINON Product Summary V(BR)DSS 20V RDS(ON) max 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID max TA = +25°C 11.7A 10.8A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • General Purpose Interfacing Switch • Power Management Functions U-DFN2020-6 DMN2011UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm2 • Low Gate Threshold Voltage • Low On-Resistance • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free.