DMN2019UTS Datasheet | Diodes Incorporated

NEW PRODUCT 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 18.5mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V 24mΩ @ VGS = 2.5V 31mΩ @ VGS = 1.8V ID max TA = 25°C 5.4 A 5.0 A 4.6 A 3.5 A Features - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - ESD Protected up to 2KV - Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - Qualified to AEC-Q101 standards for High Reliability Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management...