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DMN2019UTS Datasheet N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: NEW PRODUCT DMN2019UTS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 18.5mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V 24mΩ @ VGS = 2.5V 31mΩ @ VGS = 1.8V ID max TA = 25°C 5.4 A 5.0 A 4.6 A 3.

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications • Power management functions • Load Switch Mechanical Data • Case: TSSOP-8 • Case Material: Molded Plastic, “Green” Molding pound.

UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram Below • Weight: 0.039 grams (approximate) DD TSSOP-8 1 2 3 4 ESD PROTECTED TO 2kV Top View Bottom View DD S1 S2 S1 S2 G1 G2 Top View Pin Configuration 8 7 G1 6 5 G2 S1 N-Channel S2 N-Channel Internal Schematic Ordering Information (Note 4) Notes: Part Number DMN2019UTS-13 Case TSSOP-8 Packaging 2500/Tape & Reel 1.

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected up to 2KV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 standards for High Reliability.

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