Datasheet Summary
A D VNAENACWDEPVDRAIONNDCFUEOCIRTNMFAOT IROMNA T I O N
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS 24V
RDS(ON) Max
7mΩ @ VGS = 4.5V 7.8mΩ @ VGS = 4.0V 8.2mΩ @ VGS = 3.7V 9.5mΩ @ VGS = 3.1V 10.5mΩ @ VGS = 2.5V
ID TA = +25°C
11.0A 10.8A 10.6A 10.5A 10.0A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
- Power Management Functions
- Battery Pack
- Load Switch
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected...