Click to expand full text
ADVANCE INFORMATION
Product Summary
BVDSS 20V
RDS(ON) MAX 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V
ID MAX TA = +25°C
11.7A
10.8A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DMN2011UFDF
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change
control (i.e.
DMN2011UFDF Datasheet
