Datasheet Summary
ADVANCE INFORMATION
Product Summary
BVDSS 20V
RDS(ON) MAX 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V
ID MAX TA = +25°C
11.7A
10.8A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
- 0.6mm Profile
- Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low Gate Threshold Voltage
- Low On-Resistance
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications...