DMN2011UFDF
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. DMN2011UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET.
Key Features
- 0.6mm Profile – Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low Gate Threshold Voltage
- Low On-Resistance
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS compliant (Notes 1 &
- Halogen and Antimony Free. “Green” Device (Note
