Datasheet Details
| Part number | DMN2015UFDE |
|---|---|
| Manufacturer | Diodes Incorporated |
| File Size | 179.66 KB |
| Description | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| Datasheet | DMN2015UFDE-Diodes.pdf |
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Overview: DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V(BR)DSS RDS(ON) max 11.6mΩ @ VGS = 4.5V 20V 15mΩ @ VGS = 2.5V Package U-DFN2020-6 Type E ID max TA = +25°C 10.5A 9.
| Part number | DMN2015UFDE |
|---|---|
| Manufacturer | Diodes Incorporated |
| File Size | 179.66 KB |
| Description | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| Datasheet | DMN2015UFDE-Diodes.pdf |
|
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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Mechanical Data • • • • • Case: U-DFN2020-6 Type E Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe.
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|---|---|
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