DMN2015UFDF Datasheet | Diodes Incorporated

20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) max 9mΩ @ VGS = 4.5V 15mΩ @ VGS = 2.5V ID max TA = +25°C 15.2A 13.8A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features - 0.6mm Profile - Ideal for Low Profile Applications - PCB Footprint of 4mm2 - Low Gate Threshold Voltage - Low On-Resistance - Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e. parts...