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DMN2011UFX Datasheet Dual N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: ADVANCED INFORMATION Product Summary V(BR)DSS 20V RDS(ON) max 9.5mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V ID max TA = +25°C 12.2 A 10.

General Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

 General Purpose Interfacing Switch  Power Management Functions Mechanical Data  Case: V-DFN2050-4  Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper Leadframe.

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability.

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