Datasheet Summary
ADVANCED INFORMATION
Product Summary
V(BR)DSS 20V
RDS(ON) max
9.5mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V
ID max TA = +25°C
12.2 A 10.4 A
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
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