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DMN2011UTS - N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Battery Management Application Power Management Functions DC-DC Converters Mechan

Key Features

  • Low Gate Threshold Voltage.
  • Low On-Resistance.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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DMN2011UTS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 11mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V ID Max TC = +25°C 21A 20A Features and Benefits  Low Gate Threshold Voltage  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Battery Management Application  Power Management Functions  DC-DC Converters Mechanical Data  Case: TSSOP-8  Case Material: Molded Plastic, “Green” Molding Compound.