DMN2011UTS Datasheet (PDF) Download
Diodes Incorporated
DMN2011UTS

Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Key Features

  • Low Gate Threshold Voltage
  • Low On-Resistance
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 &
  • Halogen and Antimony Free. “Green” Device (Note
  • Qualified to AEC-Q101 Standards for High Reliability