DMN2014LHAB Datasheet Dual N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: ADVANCE INFORMATION DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 13mΩ @ VGS = 4.5V 14mΩ @ VGS = 4.0V 17mΩ @ VGS = 3.1V 18mΩ @ VGS = 2.5V 28mΩ @ VGS = 1.8V ID TA = +25°C 9.0A 8.7A 8.0A 6.7A 6.

Datasheet Details

Part number	DMN2014LHAB
Manufacturer	Diodes Incorporated
File Size	250.45 KB
Description	Dual N-Channel MOSFET
Datasheet	DMN2014LHAB-Diodes.pdf

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications • Power Management Functions • Battery Pack • Load Switch

Key Features

Low On-Resistance.
Low Gate Threshold Voltage.
Low Input Capacitance.
Fast Switching Speed.
ESD Protected Gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
Case: U-DFN2030-6.
Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0.

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