• Part: DMN2013UFDE
  • Description: 20V N-CHANNEL ENHANCEMENT MODE MOSFET
  • Category: MOSFET
  • Manufacturer: Diodes Incorporated
  • Size: 273.28 KB
Download DMN2013UFDE Datasheet PDF
Diodes Incorporated
DMN2013UFDE
Features - - - - - - - - 0.6mm profile - ideal for low profile applications PCB footprint of 4mm ESD Protected Gate Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)  Low Gate Threshold Voltage Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data - - - - - Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding pound. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Ni Pd Au over Copper leadframe. Solderable Drain per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (approximate) UL Applications - - General Purpose Interfacing Switch Power Management Functions U-DFN2020-6 Gate Gate Protection Diode ESD...