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DMN2013UFX - Dual N-Channel MOSFET

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions Featur

Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) .
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: W-DFN5020-6.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD.

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Datasheet preview – DMN2013UFX

Datasheet Details

Part number DMN2013UFX
Manufacturer Diodes Incorporated
File Size 265.13 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet DMN2013UFX Datasheet
Additional preview pages of the DMN2013UFX datasheet.

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Full PDF Text Transcription

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DMN2013UFX Dual N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 11.5mΩ @ VGS = 4.5V 14mΩ @ VGS = 2.5V ID max TA = +25°C 10 A 9A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  General Purpose Interfacing Switch  Power Management Functions Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free.
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