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DMN2013UFX Datasheet Dual N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: DMN2013UFX Dual N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 11.5mΩ @ VGS = 4.5V 14mΩ @ VGS = 2.

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  General Purpose Interfacing Switch  Power Management Functions

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • ESD Protected.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) .
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: W-DFN5020-6.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD.

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