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DMN2016LFG Datasheet Dual N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: ADVANCE INFORMATION DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 18mΩ @ VGS = 4.5V 30mΩ @ VGS = 1.8V ID TA = 25°C 5.2A 4.

General Description

and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

• Power management functions • Battery Pack • Load Switch Mechanical Data • Case: U-DFN3030-8 • Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram Below • Weight: 0.0172 grams (approximate) U-DFN3030-8 5 678 D1/D2 8 765 ESD PROTECTED TO 2kV Top View Bottom View G2 S2 G1 S1 4 321 Bottom View Pin Configuration 1 23 4 Top View Equivalent Circuit Ordering Information (Note 6) Notes: Part Number DMN2016LFG-7 Case U-DFN3030-8 1.

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1).
  • "Green" Device (Note 2).
  • Qualified to AEC-Q101 Standards for High Reliability.

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