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DMN2016LFG - Dual N-Channel MOSFET

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Power management functions Battery Pack Load Sw

Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1).
  • "Green" Device (Note 2).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Datasheet preview – DMN2016LFG

Datasheet Details

Part number DMN2016LFG
Manufacturer Diodes Incorporated
File Size 164.95 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet DMN2016LFG Datasheet
Additional preview pages of the DMN2016LFG datasheet.

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Full PDF Text Transcription

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ADVANCE INFORMATION DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 18mΩ @ VGS = 4.5V 30mΩ @ VGS = 1.8V ID TA = 25°C 5.2A 4.0A Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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