DMN2016LFG
DMN2016LFG is Dual N-Channel MOSFET manufactured by Diodes Incorporated.
ADVANCE INFORMATION
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 20V
RDS(on) max
18mΩ @ VGS = 4.5V 30mΩ @ VGS = 1.8V
ID TA = 25°C
5.2A
4.0A
Features and Benefits
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Lead, Halogen, and Antimony Free, RoHS pliant (Note 1)
- "Green" Device (Note 2)
- Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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