DMN2016LHAB
DMN2016LHAB is Dual N-Channel MOSFET manufactured by Diodes Incorporated.
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DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 20V
RDS(on)max
15.5mΩ @ VGS = 4.5V 16.5mΩ @ VGS = 4.0V 19mΩ @ VGS = 3.1V 20mΩ @ VGS = 2.5V 30mΩ @ VGS = 1.8V
ID TA = +25°C
7.5A
7.3A
6.9A
6.7A
5.4A
Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Description
Mechanical Data
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high...
