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DMN2990UFA - N-Channel MOSFET

General Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

General Purpose Interfacing Switch Power Management Functions Analog Switch

Key Features

  • Low Package Profile, 0.4mm Maximum Package height.
  • 0.48mm2 package footprint, 16 times smaller than SOT23.
  • Low On-Resistance.
  • Very low Gate Threshold Voltage, 1.0V max.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 standards for High Reliability Mechanical Data.
  • Case: X2-DFN0806-3.
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Fl.

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Full PDF Text Transcription for DMN2990UFA (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMN2990UFA. For precise diagrams, and layout, please refer to the original PDF.

NEW PRODUCT DMN2990UFA 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = ...

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x 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = 1.5V ID max TA = +25°C 510mA 470mA 380mA 330mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  General Purpose Interfacing Switch  Power Management Functions  Analog Switch Features and Benefits  Low Package Profile, 0.4mm Maximum Package height  0.48mm2 package footprint, 16 times smaller than SOT23  Low On-Resistance  Very low Gate Threshold Voltage, 1.

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