Datasheet Summary
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 60V
RDS(ON)
3Ω @ VGS = 10V 4Ω @ VGS = 5V
Package SOT23
ID TA = +25°C
310mA
270mA
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Small Surface Mount Package
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP...