* LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 65mΩ to Minimize On-State Losses Qg = 2.5nC for Ultra-Fast Switching
* Vgs(th) = -0.6V typ. for a Low Turn-On Potential
* CSP with Footprint 1.0mm × 1.0mm
* Height = 0.62mm for Low Profile
* ESD = 3kV HBM Protection o
DMP1080UCB4 Datasheet (377.52 KB)
DMP1080UCB4
377.52 KB
P-channel mosfet.
DMP1080UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) VDSS -12V RDS(on) 65mΩ Qg 2.5nC Qgd 0.6nC ID -3.3.
📁 Related Datasheet
DMP1081UCB4 P-Channel MOSFET (Diodes)
DMP1005UFDF P-CHANNEL ENHANCEMENT MODE MOSFET (DIODES)
DMP1007UCB9 P-CHANNEL MOSFET (DIODES)
DMP1008UCA9 P-CHANNEL MOSFET (DIODES)
DMP1008UCB9 P-CHANNEL MOSFET (DIODES)
DMP1009UFDF 12V P-CHANNEL MOSFET (DIODES)
DMP1009UFDFQ 12V P-CHANNEL MOSFET (DIODES)
DMP1011LFV P-Channel MOSFET (Diodes)
DMP1011LFVQ P-CHANNEL MOSFET (DIODES)
DMP1011UCB9 P-Channel MOSFET (Diodes)
