Datasheet4U Logo Datasheet4U.com

DMP1080UCB4 Datasheet P-Channel MOSFET

Manufacturer: Diodes Incorporated

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  Battery Management  Load Switch  Battery Protection

Overview

DMP1080UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ.

@ VGS = -4.5V, TA = +25°C) VDSS -12V RDS(on) 65mΩ Qg 2.5nC Qgd 0.6nC ID -3.

Key Features

  • LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 65mΩ to Minimize On-State Losses Qg = 2.5nC for Ultra-Fast Switching.
  • Vgs(th) = -0.6V typ. for a Low Turn-On Potential.
  • CSP with Footprint 1.0mm × 1.0mm.
  • Height = 0.62mm for Low Profile.
  • ESD = 3kV HBM Protection of Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.