DMP2160UW
DMP2160UW is P-Channel MOSFET manufactured by Diodes Incorporated.
Features
- Low On-Resistance
- 100 mΩ @ VGS = -4.5V
- 120 mΩ @ VGS = -2.5V
- 160 mΩ @ VGS = -1.8V Very Low Gate Threshold Voltage VGS(th) ≤ 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/Ro HS pliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q 101 Standards for High Reliability
Mechanical Data
- -
- -
- -
- - Case: SOT-323 Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Below Terminals: Finish
- Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate)
NEW PRODUCT
- -
- -
- -
- SOT-323
Drain
Gate
Source
TOP VIEW
Internal Schematic
TOP VIEW
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 3) Pulsed Drain Current
@TA = 25°C unless otherwise specified Symbol VDSS VGSS TA = 25°C TA = 70°C ID IDM Value -20 ±12 -1.5 -1.2 -10 Units V V A A
Characteristic
Thermal Characteristics
Characteristic Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Notes: 1. 2. 3.
Symbol PD RθJA TJ, TSTG
Value 350 360 -55 to +150
Units m W °C/W °C
No purposefully added lead. Diodes Inc.’s “Green” policy can be found on our website at http://.diodes./products/lead_free/index.php. Device mounted on 1in2 FR-4 PCB with 2 oz. Copper. t ≤ 10 sec.
Document number: DS31521 Rev. 3
- 2
1 of 4 .diodes.
November...