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DMP2160UW Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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Features
Low On-Resistance
100 mΩ @ VGS = -4.5V
120 mΩ @ VGS = -2.5V
160 mΩ @ VGS = -1.8V
Very Low Gate Threshold Voltage VGS(th) 1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q 101 Standards for High Reliability
DMP2160UW
P-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
SOT-323
Drain
D
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 3)
Pulsed Drain Current
Characteristic
TA = 25°C
TA = 70°C
Gate
Source
Internal Schematic
Symbol
VDSS
VGSS
ID
IDM
GS
TOP VIEW
Value
-20
±12
-1.5
-1.2
-10
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
350
360
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on 1in2 FR-4 PCB with 2 oz. Copper. t 10 sec.
Units
mW
°C/W
°C
DMP2160UW
Document number: DS31521 Rev. 3 - 2
1 of 4
www.diodes.com
November 2008
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/


Diodes Semiconductor Electronic Components Datasheet

DMP2160UW Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP2160UW
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
TJ = 25°C
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Min
-20
-0.4
Static Drain-Source On-Resistance
RDS (ON)
Forward Transconductance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gFS
VSD
Ciss
Coss
Crss
Notes:
4. Short duration pulse test used to minimize self-heating effect.
Typ
-0.6
75
90
120
4
627
64
53
Max
-1.0
±100
±800
-0.9
100
120
160
-1.0
10
VGS = 3.0V
8 VGS = 3.0V
VGS = 3.0V
VGS = 2.5V
6 VGS = 2.0V
10
VDS = -5V
8
6
Unit Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -20V, VGS = 0V
nA VGS = ±8V, VDS = 0V
VGS = ±12V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -1.5A
mΩ VGS = -2.5V, ID = -1.2A
VGS = -1.8V, ID = -1A
S VDS = -10V, ID = -1.5A
V VGS = 0V, IS = -1.0A
pF
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
pF
4
VGS = 1.5V
2
0
01 2 3 45
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
1.6
1.4
VGS = -2.5V
ID = -2A
1.2 VGS = -4.5V
ID = -4.5A
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance Variation with Temperature
4
2
0
0
1,200
1,000
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.5 1 1.5 2 2.5
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
f = 1MHz
VGS = 0V
3
800
600
Ciss
400
200
Coss
0 Crss
04
8 12 16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Capacitance
20
DMP2160UW
Document number: DS31521 Rev. 3 - 2
2 of 4
www.diodes.com
November 2008
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/


Part Number DMP2160UW
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 4 Pages
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