Download DMP2160UW Datasheet PDF
Diodes Incorporated
DMP2160UW
DMP2160UW is P-Channel MOSFET manufactured by Diodes Incorporated.
Features - Low On-Resistance - 100 mΩ @ VGS = -4.5V - 120 mΩ @ VGS = -2.5V - 160 mΩ @ VGS = -1.8V Very Low Gate Threshold Voltage VGS(th) ≤ 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/Ro HS pliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q 101 Standards for High Reliability Mechanical Data - - - - - - - - Case: SOT-323 Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) NEW PRODUCT - - - - - - - SOT-323 Drain Gate Source TOP VIEW Internal Schematic TOP VIEW Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 3) Pulsed Drain Current @TA = 25°C unless otherwise specified Symbol VDSS VGSS TA = 25°C TA = 70°C ID IDM Value -20 ±12 -1.5 -1.2 -10 Units V V A A Characteristic Thermal Characteristics Characteristic Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. 2. 3. Symbol PD RθJA TJ, TSTG Value 350 360 -55 to +150 Units m W °C/W °C No purposefully added lead. Diodes Inc.’s “Green” policy can be found on our website at http://.diodes./products/lead_free/index.php. Device mounted on 1in2 FR-4 PCB with 2 oz. Copper. t ≤ 10 sec. Document number: DS31521 Rev. 3 - 2 1 of 4 .diodes. November...