* LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 80mΩ to Minimize On-State Losses Qg = 3.3nC for Ultra-Fast Switching
* Vgs(th) = -0.7V typ. for a Low Turn-On Potential
* CSP with Footprint 1.5mm × 1.5mm
* Height = 0.62mm for Low Profile
* ESD = 3kV HBM Protection o
DMP2100UCB9 Datasheet (404.49 KB)
DMP2100UCB9
404.49 KB
P-channel mosfet.
NEW PRODUCT DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25°C) VDSS -20V RDS(on) 80mΩ Qg 3.3nC .
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