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DMP3017SFK Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP3017SFK
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-30V
RDS(on)max
14mΩ @ VGS = -10V
25mΩ @ VGS = -4.5V
ID
TA = +25°C
-10.4A
-7.8A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
DC-DC Converters
Features and Benefits
Low On-Resistance
Low Input Capacitance
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2523-6
Case Material: Molded Plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.008 grams (Approximate)
U-DFN2523-6
Pin 1
D
ESD PROTECTED
Pin 1, 2 = Source
Pin 3 = Gate
Pin 4, 5, 6 = Drain
Bottom View
G
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP3017SFK-7
DMP3017SFK-13
Case
U-DFN2523-6
U-DFN2523-6
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-DFN2523-6
P7
P7 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan Feb
12
2015
C
Mar
3
2016
D
Apr May
45
2017
E
Jun Jul
67
2018
F
Aug
8
Sep
9
2019
G
Oct
O
2020
H
Nov Dec
ND
DMP3017SFK
Document number: DS37310 Rev. 4 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMP3017SFK Datasheet

P-CHANNEL ENHANCEMENT MODE MOSFET

No Preview Available !

DMP3017SFK
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Value
-30
±25
-10.4
-8.3
-7.8
-6.2
-3
-80
-14
104
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
TC = +25°C
Symbol
PD
RJA
PD
RJA
PD
RJC
TJ, TSTG
Value
1
123
2.2
55
17
7.2
-55 to +150
Units
W
°C/W
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Zero Gate Voltage Drain Current TJ = +150°C (Note 9)
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
On State Drain Current (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
-30
VGS(th)
RDS(ON)
VSD
ID(ON)
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
-1
-20
Typ
-1.6
9.5
15
-0.7
2207
390
343
8.4
42.7
21.6
7.9
10
7.35
16.4
67.2
37.5
18.6
8.6
Max
-1
-100
±10
-2.5
14
25
-1.2
4414
780
686
20
90
45
16
20
15
30
110
60
35
17.5
Unit
Test Condition
V VGS = 0V, ID = -10mA
µA VDS = -24V, VGS = 0V
µA VGS = ±25V, VDS = 0V
V VDS = VGS, ID = -250μA
mVGS = -10V, ID = -9.5A
VGS = -4.5V, ID = -6.9A
V VGS = 0V, IS = -1A
A VDS -5V, VGS = -10V
pF VDS = -15V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = -15V, ID = -9.5A
ns
VDD = -15V, VGS = -10V,
RGEN = 6Ω, ID = -9.5A
ns
nC
IS = -9.5A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
7. UIS in production with L = 1mH, TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMP3017SFK
Document number: DS37310 Rev. 4 - 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated



Part Number DMP3017SFK
Description P-CHANNEL ENHANCEMENT MODE MOSFET
Maker Diodes
Total Page 7 Pages
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DMP3017SFK Datasheet PDF





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