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DMS2120LFWB - P-CHANNEL ENHANCEMENT MODE MOSFET

Features

  • Low On-Resistance.
  • 95mΩ @VGS = -4.5V.
  • 120mΩ @VGS = -2.5V.
  • 150mΩ (typ) @VGS = -1.8V.
  • Low Gate Threshold Voltage, -1.3V Max.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Incorporates Low VF Super Barrier Rectifier (SBR).
  • Low Profile, 0.5mm Max Height.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standard.

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Full PDF Text Transcription

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NEW PRODUCT DMS2120LFWB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR® SUPER BARRIER RECTIFIER Features • Low On-Resistance • 95mΩ @VGS = -4.5V • 120mΩ @VGS = -2.5V • 150mΩ (typ) @VGS = -1.8V • Low Gate Threshold Voltage, -1.3V Max • Fast Switching Speed • Low Input/Output Leakage • Incorporates Low VF Super Barrier Rectifier (SBR) • Low Profile, 0.5mm Max Height • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: U-DFN3020-8 Type B • Case Material: Molded Plastic, “Green” Molding Compound.
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