DMS2120LFWB
DMS2120LFWB is P-CHANNEL ENHANCEMENT MODE MOSFET manufactured by Diodes Incorporated.
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR® SUPER BARRIER RECTIFIER
Features
- Low On-Resistance
- 95mΩ @VGS = -4.5V
- 120mΩ @VGS = -2.5V
- 150mΩ (typ) @VGS = -1.8V
- Low Gate Threshold Voltage, -1.3V Max
- Fast Switching Speed
- Low Input/Output Leakage
- Incorporates Low VF Super Barrier Rectifier (SBR)
- Low Profile, 0.5mm Max Height
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
- Case: U-DFN3020-8 Type B
- Case Material: Molded Plastic, “Green” Molding pound. UL
Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram
- Terminals: Finish
- Ni Pd Au annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e4
- Weight: 0.011 grams (approximate)
U-DFN3020-8 Type B
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