DMS2220LFDB
DMS2220LFDB is P-Channel MOSFET manufactured by Diodes Incorporated.
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR SUPER BARRIER RECTIFIER
Features
- Low On-Resistance
- 95m @VGS = -4.5V
- 120m @VGS = -2.5V
- 86m (Typ) @VGS = -1.8V
- Low Gate Threshold Voltage, -1.3V Max
- Fast Switching Speed
- Low Input/Output Leakage
- Incorporates Low VF Super Barrier Rectifier (SBR®)
- Low Profile, 0.5mm Max Height
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://.diodes./products/automotive/automotiveproducts/.
- This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://.diodes./quality/product-definitions/
Mechanical Data
- Case: U-DFN2020-6
- Case Material: Molded Plastic, “Green” Molding pound. UL
Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram
- Terminals: Finish
- Ni Pd Au over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4
- Weight: 0.0065 grams (Approximate)
U-DFN2020-6 (Type B)
Bottom View
D NC A
Q1
D1
S...
