DZTA42Q transistor equivalent, 300v npn high voltage transistor.
* BVCEO > 300V
* IC = 500mA High Collector Current
* 2W Power Dissipation
* Low Saturation Voltage VCE(SAT) < 500mV @ 20mA
* Complementary PNP Type: D.
Features
* BVCEO > 300V
* IC = 500mA High Collector Current
* 2W Power Dissipation
* Low Saturation Vol.
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
Features
* BVCEO > 300V
* IC = 500mA High Collector Current
* 2W Power Dissipation
* Low Saturation Voltage VCE(SAT) < 5.
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