DFB30N06 datasheet, mosfet equivalent, DnI

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DFB30N06 Features and benefits

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* Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avalanche Tested M.

DFB30N06 Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designe.

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