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DFB30N06 Datasheet Preview

DFB30N06 Datasheet

N-Channel MOSFET

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DFB30N06 pdf
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DFB30N06
N-Channel MOSFET
Features
Low RDS(on) (0.04)@VGS=10V
Low Gate Charge (Typical 27nC)
Low Crss (Typical 75pF)
Improved dv/dt Capability
100% Avalanche Tested
Maximum Junction Temperature Range
1.Gate
2.Drain
3.Source
BVDSS = 60V
RDS(ON) = 0.04 ohm
ID = 30A
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for battery operated systems like a DC-DC converter
motor control , ups ,audio amplifier.
Also, especially designed to minimize rds(on) , low gate charge
and high rugged avalanche characteristics.
TO-263
(D2-Pak)
2
1
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 3)
Value
60
30
21.2
120
±20
430
7.0
79
0.53
- 55 ~ 175
300
Value
Typ.
-
0.5
-
Max.
1.90
-
62.5
Units
V
A
A
A
V
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
May, 2006, Rev. 0.
Copyright@ D&I Semiconductor Co., Ltd., All rights reserved.
1/7



DnI
DnI

DFB30N06 Datasheet Preview

DFB30N06 Datasheet

N-Channel MOSFET

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DFB30N06 pdf
www.DataSheet4U.com
DFB30N06
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 60V, VGS = 0V
VDS = 48V, TC = 150 °C
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 15A
VGS =0 V, VDS =25V, f = 1MHz
VDD =30V, ID =15A, RG =50
see fig. 13.
(Note 4, 5)
VDS =48V, VGS =10V, ID =30A
see fig. 12.
(Note 4, 5)
Min
60
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
--
0.062
-
-1
- 10
100
- -100
V
V/°C
uA
uA
nA
nA
-
0.029
4.0
0.04
V
930 1210
290 380
75 100
pF
15 40
25 60
60 130
40 90
27 35
6.2 -
11.1 -
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =30A, VGS =0V
IS=30A,VGS=0V,dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 560uH, IAS =30A, VDD = 25V, RG = 0, Starting TJ = 25°C
3. ISD 30A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
45
65
Max.
30
120
1.5
-
-
Unit.
A
V
ns
nC
2/7


Part Number DFB30N06
Description N-Channel MOSFET
Maker DnI
Total Page 7 Pages
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