Datasheet4U Logo Datasheet4U.com

DFB70N06 - N-Channel MOSFET

General Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier.

Key Features

  • Low RDS(on) (0.014Ω )@VGS=10V Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.014 ohm ID = 70A General.

📥 Download Datasheet

Datasheet Details

Part number DFB70N06
Manufacturer DnI
File Size 751.09 KB
Description N-Channel MOSFET
Datasheet download datasheet DFB70N06 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DFB-2004-3 DFB laser diodes Roithner
DFB-DM-1550-4 4 GHz 1550 nm Directly Modulated DFB Laser Optilab
DFB2005 Glass-Passivated Bridge Rectifiers Fairchild Semiconductor
DFB2010 Glass-Passivated Bridge Rectifiers Fairchild Semiconductor
DFB20100 Glass-Passivated Bridge Rectifiers Fairchild Semiconductor

Other Datasheets by DnI

Part Number Description
DFB7N60 N-Channel MOSFET
DFB30N06 N-Channel MOSFET
DFB4N60 N-Channel MOSFET
DFB50N06 N-Channel MOSFET
DFB85N06 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com DFB70N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.014Ω )@VGS=10V Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.014 ohm ID = 70A General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics.