DFB70N06 Overview
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. 0.95 62.5 Units °C/W °C/W °C/W May, 2006, Rev.
DFB70N06 Key Features
- Low RDS(on) (0.014Ω )@VGS=10V Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Ava