DFB4N60
DFB4N60 is N-Channel MOSFET manufactured by DnI.
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N-Channel MOSFET
Features
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- N-Channel MOSFET
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High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 22n C) Improved dv/dt Capability 100% Avalanche Tested 1. Gate {
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2. Drain
BVDSS = 600V
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RDS(ON) = 2.5 ohm ID = 4A
3. Source
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General Description
This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
TO-263...
