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DFB4N60 - N-Channel MOSFET

General Description

This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Key Features

  • N-Channel MOSFET { High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 22nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { ◀ 2. Drain BVDSS = 600V.
  • ▲.
  • RDS(ON) = 2.5 ohm ID = 4A 3. Source { General.

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Datasheet Details

Part number DFB4N60
Manufacturer DnI
File Size 721.78 KB
Description N-Channel MOSFET
Datasheet download datasheet DFB4N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DFB4N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ N-Channel MOSFET { High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 22nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { ◀ 2. Drain BVDSS = 600V ● ▲ ● ● RDS(ON) = 2.5 ohm ID = 4A 3. Source { General Description This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.