DnI DFB4N60
This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.| Part No. | DFB4N60 |
|---|---|
| Datasheet | DFB4N60 Download |
| Manufacturer |  DnI |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
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● N-Channel MOSFET { High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 22nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { ◀ 2. Drain BVDSS = 600V
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● RDS(ON) = 2.5 ohm ID = 4A 3. Source {
GENERAL DESCRIPTION
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. TO-263 (D2-Pak) 2 1 3ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 600 4 2.5 16 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 262 10 4.5 100 0.8 - 5...
