DFB85N06 Description
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. 0.94 62.5 Units °C/W °C/W °C/W Oct, 2005.
DFB85N06 Key Features
- Low RDS(on) (0.010Ω )@VGS=10V Low Gate Charge (Typical 96nC) Low Crss (Typical 215pF) Improved dv/dt Capability 100% Ava