DFB30N06 Description
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. 1.90 62.5 Units °C/W °C/W °C/W May, 2006, Rev.
DFB30N06 Key Features
- Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avala